RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
Lead Time: 70 Days
Products specifications
| Id - Continuous Drain Current | 100 mA |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 193 V |
| Maximum Operating Temperature | + 150 C |
| Gain | 24.8 dB |
| Minimum Operating Temperature | - 40 C |
| Mounting Style | Screw Mount |
| Output Power | 35 W |
| Product Type | RF MOSFET Transistors |
| Technology | Si |
| Packaging | Cut Tape, Reel |