MRFX1K80GNR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
Lead Time: 70 Days

SKU: MRFX1K80GNR5

Availability: 5 in stock

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R 8,546.48

R 7,366.12

R 6,893.98

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RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
Lead Time: 70 Days

Products specifications

Product Type	RF MOSFET Transistors
Output Power	1.8 kW
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 179 V
Technology	Si
Gain	24.4 dB
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	43 A

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Products specifications

Product Type	RF MOSFET Transistors
Output Power	1.8 kW
Minimum Operating Temperature	- 40 C
Vds - Drain-Source Breakdown Voltage	- 500 mV, 179 V
Technology	Si
Gain	24.4 dB
Transistor Polarity	Dual N-Channel
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	43 A