Sub-GHz Development Tools MRFX1K80N-230MHZ
Products specifications
| Transistor Polarity | Dual N-Channel |
| Product Type | RF MOSFET Transistors |
| Technology | Si |
| Output Power | 1.8 kW |
| Id - Continuous Drain Current | 43 A |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 179 V |
| Maximum Operating Temperature | + 150 C |
| Gain | 24.4 dB |
| Minimum Operating Temperature | - 40 C |