Sub-GHz Development Tools MRFX1K80N 87.5-108 MHz Reference Circuit
Lead Time: 1 Days
Products specifications
| Product Type | RF MOSFET Transistors, RF Development Tools |
| Output Power | 1.8 kW |
| Gain | 24.4 dB |
| Technology | Si |
| Type | RF Power MOSFET |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 43 A |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 179 V |
| Minimum Operating Temperature | - 40 C |
| Transistor Polarity | Dual N-Channel |