Sub-GHz Development Tools MRFX1K80N 87.5-108 MHz Reference Circuit
Lead Time: 365 Days
Products specifications
|
Product Type
|
RF MOSFET Transistors, RF Development Tools |
|
Output Power
|
1.8 kW |
|
Gain
|
24.4 dB |
|
Technology
|
Si |
|
Type
|
RF Power MOSFET |
|
Maximum Operating Temperature
|
+ 150 C |
|
Id - Continuous Drain Current
|
43 A |
|
Vds - Drain-Source Breakdown Voltage
|
- 500 mV, 179 V |
|
Minimum Operating Temperature
|
- 40 C |
|
Transistor Polarity
|
Dual N-Channel |