MRFX600GSR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

SKU: MRFX600GSR5

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Quantity

50+

Price

R 4,407.42

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RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

Products specifications

Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Output Power	600 W
Gain	26.4 dB
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Id - Continuous Drain Current	32 A
Vds - Drain-Source Breakdown Voltage	193 V
Minimum Operating Temperature	- 40 C
Technology	Si

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Products specifications

Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape, Reel
Output Power	600 W
Gain	26.4 dB
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Id - Continuous Drain Current	32 A
Vds - Drain-Source Breakdown Voltage	193 V
Minimum Operating Temperature	- 40 C
Technology	Si