PBHV2160ZX

Bipolar Transistors - BJT 600 V, 0.1 A PNP high-voltage low VCEsat transistor
Lead Time: 56 Days

SKU: PBHV2160ZX

Availability: 2492 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

Price

R 20.79

R 12.92

R 8.54

Free shipping

Bipolar Transistors - BJT 600 V, 0.1 A PNP high-voltage low VCEsat transistor
Lead Time: 56 Days

Products specifications

Collector-Emitter Saturation Voltage	65 mV
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	100 mA
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	600 V
Collector- Emitter Voltage VCEO Max	600 V
Technology	Si
Gain Bandwidth Product fT	-
Emitter- Base Voltage VEBO	6 V

Your name *

Your email *

Enquiry *

Products specifications

Collector-Emitter Saturation Voltage	65 mV
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum DC Collector Current	100 mA
Transistor Polarity	NPN
Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	600 V
Collector- Emitter Voltage VCEO Max	600 V
Technology	Si
Gain Bandwidth Product fT	-
Emitter- Base Voltage VEBO	6 V