PBHV8115Z,115

Bipolar Transistors - BJT 150 V, 1 A NPN high-voltage low VCEsat transistor
Lead Time: 56 Days

SKU: PBHV8115Z,115

Availability: 2000 in stock

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R 16.69

R 10.64

R 7.33

R 5.87

R 4.23

R 4.15

R 4.13

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Bipolar Transistors - BJT 150 V, 1 A NPN high-voltage low VCEsat transistor
Lead Time: 56 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	400 V
Gain Bandwidth Product fT	30 MHz
Minimum Operating Temperature	- 55 C
Configuration	Single
Maximum DC Collector Current	1 A
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	150 V
Collector-Emitter Saturation Voltage	225 mV
Emitter- Base Voltage VEBO	6 V

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Products specifications

Maximum Operating Temperature	+ 150 C
Collector- Base Voltage VCBO	400 V
Gain Bandwidth Product fT	30 MHz
Minimum Operating Temperature	- 55 C
Configuration	Single
Maximum DC Collector Current	1 A
Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	150 V
Collector-Emitter Saturation Voltage	225 mV
Emitter- Base Voltage VEBO	6 V