Bipolar Transistors - BJT Silicon diffused power transistor
Lead Time: 112 Days
Products specifications
| Collector- Base Voltage VCBO | 700 V |
| Configuration | Single |
| Technology | Si |
| Mounting Style | Through Hole |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Emitter- Base Voltage VEBO | 9 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Transistor Polarity | NPN |
| Maximum DC Collector Current | 1.5 A |
| Maximum Operating Temperature | + 150 C |