PHE13005X/01,127

Bipolar Transistors - BJT Silicon diffused pwr transistor

SKU: PHE13005X/01,127

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6000+

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R 5.28

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Bipolar Transistors - BJT Silicon diffused pwr transistor

Products specifications

Collector- Emitter Voltage VCEO Max	400 V
Configuration	Single
Maximum DC Collector Current	4 A
Collector- Base Voltage VCBO	700 V
Collector-Emitter Saturation Voltage	0.3 V
Transistor Polarity	NPN
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Technology	Si

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Products specifications

Collector- Emitter Voltage VCEO Max	400 V
Configuration	Single
Maximum DC Collector Current	4 A
Collector- Base Voltage VCBO	700 V
Collector-Emitter Saturation Voltage	0.3 V
Transistor Polarity	NPN
Mounting Style	Through Hole
Maximum Operating Temperature	+ 150 C
Technology	Si