GaN FETs DC-4GHz 45W GaN 48V
Lead Time: 112 Days
Products specifications
| Gain | 21.7 dB |
| Output Power | 45 W |
| Product Type | RF JFET Transistors |
| Minimum Operating Temperature | - 40 C |
| Technology | GaN |
| Vgs - Gate-Source Breakdown Voltage | - |
| Id - Continuous Drain Current | - |
| Packaging | Cut Tape, Reel |
| Maximum Drain Gate Voltage | - |
| Pd - Power Dissipation | 45 W |
| Maximum Operating Temperature | - |
| Vds - Drain-Source Breakdown Voltage | - |