GaN FETs DC-4GHz 45W GaN 48V
Lead Time: 112 Days
Products specifications
|
Gain
|
21.7 dB |
|
Output Power
|
45 W |
|
Product Type
|
RF JFET Transistors |
|
Minimum Operating Temperature
|
- 40 C |
|
Technology
|
GaN |
|
Vgs - Gate-Source Breakdown Voltage
|
- |
|
Id - Continuous Drain Current
|
- |
|
Packaging
|
Cut Tape, Reel |
|
Maximum Drain Gate Voltage
|
- |
|
Pd - Power Dissipation
|
45 W |
|
Maximum Operating Temperature
|
- |
|
Vds - Drain-Source Breakdown Voltage
|
- |