QPD1000

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RF Development Tools 100 1000MHz Evaluation Board

SKU: QPD1000

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GaN FETs 30 - 1215 MHz, 15 Watt, GaN RF Input-Matched Transistor

Products specifications

Id - Continuous Drain Current	817 mA
Technology	GaN SiC
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	28 V
Pd - Power Dissipation	28.8 W
Gain	19 dB
Transistor Polarity	N-Channel
Output Power	24 W
Vgs - Gate-Source Breakdown Voltage	100 V
Product Type	RF JFET Transistors

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Products specifications

Id - Continuous Drain Current	817 mA
Technology	GaN SiC
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	28 V
Pd - Power Dissipation	28.8 W
Gain	19 dB
Transistor Polarity	N-Channel
Output Power	24 W
Vgs - Gate-Source Breakdown Voltage	100 V
Product Type	RF JFET Transistors