QPD1003

GaN FETs 1.2-1.4GHz 500W 50V SSG 20dB GaN
Lead Time: 140 Days

SKU: QPD1003

Availability: 16 in stock

Qty:

Free shipping

GaN FETs 1.2-1.4GHz 500W 50V SSG 20dB GaN
Lead Time: 140 Days

Products specifications

Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	145 V
Packaging	Tray
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Technology	GaN SiC
Id - Continuous Drain Current	15 A
Pd - Power Dissipation	370 W
Product Type	RF JFET Transistors
Output Power	540 W
Vds - Drain-Source Breakdown Voltage	50 V
Gain	19.9 dB

Your name *

Your email *

Enquiry *

Products specifications

Transistor Type	HEMT
Vgs - Gate-Source Breakdown Voltage	145 V
Packaging	Tray
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Technology	GaN SiC
Id - Continuous Drain Current	15 A
Pd - Power Dissipation	370 W
Product Type	RF JFET Transistors
Output Power	540 W
Vds - Drain-Source Breakdown Voltage	50 V
Gain	19.9 dB