QPD1004SR

GaN FETs .03-1.2GHz 25W 50V GaN
Lead Time: 0 Days

SKU: QPD1004SR

Availability: 53 in stock

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1+

25+

100+

Price

R 3,886.58

R 2,818.75

R 2,036.98

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GaN FETs .03-1.2GHz 25W 50V GaN
Lead Time: 0 Days

Products specifications

Transistor Type	HEMT
Gain	20.8 dB
Pd - Power Dissipation	27.6 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3.6 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Output Power	40 W
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Transistor Type	HEMT
Gain	20.8 dB
Pd - Power Dissipation	27.6 W
Vgs - Gate-Source Breakdown Voltage	145 V
Vds - Drain-Source Breakdown Voltage	50 V
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Id - Continuous Drain Current	3.6 A
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Output Power	40 W
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Packaging	Cut Tape, MouseReel, Reel