GaN FETs DC-3.2GHz 120W 50V SSG 17.5dB GaN
Products specifications
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Pd - Power Dissipation | 127 W |
| Transistor Type | HEMT |
| Technology | GaN SiC |
| Minimum Operating Temperature | - 40 C |
| Transistor Polarity | N-Channel |
| Output Power | 162 W |
| Product Type | RF JFET Transistors |
| Packaging | Tray |
| Id - Continuous Drain Current | 4 A |
| Maximum Operating Temperature | + 85 C |
| Gain | 17.5 dB |
| Vgs - Gate-Source Breakdown Voltage | 145 V |