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772-QPD1009

Manufacturer: Qorvo

QPD1009

GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

SKU: QPD1009

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GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN

Products specifications

Transistor Type	HEMT
Packaging	Tray
Gain	24 dB
Output Power	17 W
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	700 mA
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	50 V
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	17.5 W

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Products specifications

Transistor Type	HEMT
Packaging	Tray
Gain	24 dB
Output Power	17 W
Vgs - Gate-Source Breakdown Voltage	145 V
Technology	GaN SiC
Maximum Operating Temperature	+ 85 C
Id - Continuous Drain Current	700 mA
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	50 V
Minimum Operating Temperature	- 40 C
Transistor Polarity	N-Channel
Pd - Power Dissipation	17.5 W