QPD1011SR

GaN FETs .03-1.2GHz 7W 50V GaN

SKU: QPD1011SR

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Quantity

100+

Price

R 1,150.11

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GaN FETs .03-1.2GHz 7W 50V GaN

Products specifications

Maximum Operating Temperature	+ 85 C
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	50 V
Gain	21 dB
Id - Continuous Drain Current	1.46 A
Product Type	RF JFET Transistors
Output Power	8.7 W
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Pd - Power Dissipation	13 W
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Breakdown Voltage	145 V

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Products specifications

Maximum Operating Temperature	+ 85 C
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	50 V
Gain	21 dB
Id - Continuous Drain Current	1.46 A
Product Type	RF JFET Transistors
Output Power	8.7 W
Transistor Type	HEMT
Minimum Operating Temperature	- 40 C
Technology	GaN SiC
Maximum Drain Gate Voltage	55 V
Pd - Power Dissipation	13 W
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Breakdown Voltage	145 V