QPD1013SR

GaN FETs DC-2.7GHz 150W PAE 64.8%

SKU: QPD1013SR

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Quantity

100+

Price

R 5,803.60

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GaN FETs DC-2.7GHz 150W PAE 64.8%

Products specifications

Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Drain Gate Voltage	65 V
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	67 W
Id - Continuous Drain Current	1.7 A
Gain	21.8 dB
Technology	GaN SiC
Output Power	178 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT

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Products specifications

Product Type	RF JFET Transistors
Minimum Operating Temperature	- 40 C
Maximum Drain Gate Voltage	65 V
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	67 W
Id - Continuous Drain Current	1.7 A
Gain	21.8 dB
Technology	GaN SiC
Output Power	178 W
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 85 C
Transistor Type	HEMT