GaN FETs 3.1-3.5 GHz,450W,50V GaN RF IMFET
Lead Time: 0 Days
Products specifications
|
Output Power
|
460 W |
|
Minimum Operating Temperature
|
- 40 C |
|
Transistor Type
|
HEMT |
|
Pd - Power Dissipation
|
511 W |
|
Gain
|
15.7 dB |
|
Transistor Polarity
|
N-Channel |
|
Product Type
|
RF JFET Transistors |
|
Maximum Operating Temperature
|
+ 85 C |
|
Maximum Drain Gate Voltage
|
55 V |
|
Technology
|
GaN SiC |
|
Id - Continuous Drain Current
|
20 A |