QPD1017

GaN FETs 3.1-3.5 GHz,450W,50V GaN RF IMFET
Lead Time: 0 Days

SKU: QPD1017

Availability: 11 in stock

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GaN FETs 3.1-3.5 GHz,450W,50V GaN RF IMFET
Lead Time: 0 Days

Products specifications

Output Power	460 W
Minimum Operating Temperature	- 40 C
Transistor Type	HEMT
Pd - Power Dissipation	511 W
Gain	15.7 dB
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C
Maximum Drain Gate Voltage	55 V
Technology	GaN SiC
Id - Continuous Drain Current	20 A

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Products specifications

Output Power	460 W
Minimum Operating Temperature	- 40 C
Transistor Type	HEMT
Pd - Power Dissipation	511 W
Gain	15.7 dB
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C
Maximum Drain Gate Voltage	55 V
Technology	GaN SiC
Id - Continuous Drain Current	20 A