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772-QPD1019

Manufacturer: Qorvo

QPD1019

RF Development Tools 2.9-3.3 GHz, 500W, 50V, GaN RF IMFET

SKU: QPD1019EVB01

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RF Development Tools 2.9-3.3 GHz, 500W, 50V, GaN RF IMFET

Products specifications

Vgs - Gate-Source Breakdown Voltage	- 7 V to 2 V
Maximum Drain Gate Voltage	55 V
Transistor Type	HEMT
Id - Continuous Drain Current	15 A
Pd - Power Dissipation	522 W
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	150 V
Gain	16.3 dB
Technology	GaN SiC

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Products specifications

Vgs - Gate-Source Breakdown Voltage	- 7 V to 2 V
Maximum Drain Gate Voltage	55 V
Transistor Type	HEMT
Id - Continuous Drain Current	15 A
Pd - Power Dissipation	522 W
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C
Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	150 V
Gain	16.3 dB
Technology	GaN SiC