GaN FETs 2.7-3.5GHz 30W Gain 18.4dB
Lead Time: 0 Days
Products specifications
|
Technology
|
GaN SiC |
|
Packaging
|
Reel |
|
Output Power
|
31 W |
|
Transistor Polarity
|
N-Channel |
|
Maximum Operating Temperature
|
+ 85 C |
|
Gain
|
18.4 dB |
|
Vds - Drain-Source Breakdown Voltage
|
50 V |
|
Minimum Operating Temperature
|
- 40 C |
|
Id - Continuous Drain Current
|
100 mA |
|
Product Type
|
RF MOSFET Transistors |