QPD1022SR

GaN FETs DC-12GHz 10W 32V GaN
Lead Time: 140 Days

SKU: QPD1022SR

Availability: 634 in stock

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R 1,622.51

R 1,107.82

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GaN FETs DC-12GHz 10W 32V GaN
Lead Time: 140 Days

Products specifications

Gain	24 dB
Id - Continuous Drain Current	610 mA
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 2.8 V
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C
Vds - Drain-Source Breakdown Voltage	32 V
Pd - Power Dissipation	13.8 W
Transistor Type	HEMT
Output Power	10 W
Packaging	Reel
Technology	GaN SiC

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Products specifications

Gain	24 dB
Id - Continuous Drain Current	610 mA
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C
Vgs - Gate-Source Breakdown Voltage	- 2.8 V
Product Type	RF JFET Transistors
Maximum Operating Temperature	+ 85 C
Vds - Drain-Source Breakdown Voltage	32 V
Pd - Power Dissipation	13.8 W
Transistor Type	HEMT
Output Power	10 W
Packaging	Reel
Technology	GaN SiC