QPD1025

GaN FETs 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN

SKU: QPD1025

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

18+

Price

R 75,215.20

Free shipping

GaN FETs 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Output Power	1.862 kW
Maximum Operating Temperature	+ 85 C
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Technology	GaN SiC
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	28 A
Gain	22.5 dB
Packaging	Tray

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Output Power	1.862 kW
Maximum Operating Temperature	+ 85 C
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Technology	GaN SiC
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	28 A
Gain	22.5 dB
Packaging	Tray