QPD1025

GaN FETs 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
Lead Time: 140 Days

SKU: QPD1025

Availability: 13 in stock

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GaN FETs 1-1.1GHz 1800 Watt Gain 22.5dB 65V GaN
Lead Time: 140 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Output Power	1.862 kW
Maximum Operating Temperature	+ 85 C
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Technology	GaN SiC
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	28 A
Gain	22.5 dB
Packaging	Tray

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Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Output Power	1.862 kW
Maximum Operating Temperature	+ 85 C
Transistor Polarity	Dual N-Channel
Product Type	RF MOSFET Transistors
Technology	GaN SiC
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	28 A
Gain	22.5 dB
Packaging	Tray