GaN FETs 1-1.1GHz 1500 Watt Gain 22.9dB 65V
Products specifications
| Gain | 22.9 dB |
| Maximum Operating Temperature | + 85 C |
| Product Type | RF JFET Transistors |
| Output Power | 1.5 kW |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tray |
| Technology | GaN SiC |
| Transistor Type | HEMT |