QPD1025L

R 3,034.40

GaN FETs 1-1.1GHz 1500 Watt Gain 22.9dB 65V

SKU: QPD1025L

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GaN FETs 1-1.1GHz 1500 Watt Gain 22.9dB 65V

Products specifications

Gain	22.9 dB
Maximum Operating Temperature	+ 85 C
Product Type	RF JFET Transistors
Output Power	1.5 kW
Minimum Operating Temperature	- 40 C
Packaging	Tray
Technology	GaN SiC
Transistor Type	HEMT

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Products specifications

Gain	22.9 dB
Maximum Operating Temperature	+ 85 C
Product Type	RF JFET Transistors
Output Power	1.5 kW
Minimum Operating Temperature	- 40 C
Packaging	Tray
Technology	GaN SiC
Transistor Type	HEMT