RF JFET Transistors 1.8-2.2GHz 330W GaN RF -EG4266D,E,F
Products specifications
| Transistor Polarity | N-Channel |
| Maximum Drain Gate Voltage | 55 V |
| Output Power | 371 W |
| Maximum Operating Temperature | + 85 C |
| Product Type | RF JFET Transistors |
| Packaging | Reel |
| Technology | GaN SiC |
| Minimum Operating Temperature | - 40 C |
| Transistor Type | HEMT |
| Gain | 19.1 dB |