RF JFET Transistors 1.8-2.2GHz 330W GaN RF -EG4266D,E,F
Products specifications
|
Transistor Polarity
|
N-Channel |
|
Maximum Drain Gate Voltage
|
55 V |
|
Output Power
|
371 W |
|
Maximum Operating Temperature
|
+ 85 C |
|
Product Type
|
RF JFET Transistors |
|
Packaging
|
Reel |
|
Technology
|
GaN SiC |
|
Minimum Operating Temperature
|
- 40 C |
|
Transistor Type
|
HEMT |
|
Gain
|
19.1 dB |