RF JFET Transistors 1.8-2.2GHz 440W GaN RF-EG4266A,B,C
Products specifications
| Packaging | Reel |
| Transistor Polarity | N-Channel |
| Gain | 20.4 dB |
| Transistor Type | HEMT |
| Product Type | RF JFET Transistors |
| Maximum Drain Gate Voltage | 55 V |
| Output Power | 400 W |
| Technology | GaN SiC |
| Minimum Operating Temperature | - 40 C |