RF JFET Transistors 1.8-2.2GHz 440W GaN RF-EG4266A,B,C
Products specifications
|
Packaging
|
Reel |
|
Transistor Polarity
|
N-Channel |
|
Gain
|
20.4 dB |
|
Transistor Type
|
HEMT |
|
Product Type
|
RF JFET Transistors |
|
Maximum Drain Gate Voltage
|
55 V |
|
Output Power
|
400 W |
|
Technology
|
GaN SiC |
|
Minimum Operating Temperature
|
- 40 C |