QPD2731SR

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RF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty

SKU: QPD2731SR

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RF JFET Transistors 110/200 Watt, 48 Volt, 2.5-2.7 GHz, GaN Asymmetric Doherty

Products specifications

Gain	16.3 dB
Maximum Operating Temperature	+ 85 C
Technology	GaN SiC
Packaging	Reel
Transistor Type	HEMT
Output Power	316 W
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	55 V
Transistor Polarity	N-Channel

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Products specifications

Gain	16.3 dB
Maximum Operating Temperature	+ 85 C
Technology	GaN SiC
Packaging	Reel
Transistor Type	HEMT
Output Power	316 W
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Maximum Drain Gate Voltage	55 V
Transistor Polarity	N-Channel