QPD2793

GaN FETs 2.62-2.69GHz GaN 200W 48V

SKU: QPD2793

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Quantity

25+

Price

R 3,411.36

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GaN FETs 2.62-2.69GHz GaN 200W 48V

Products specifications

Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Pd - Power Dissipation	-
Id - Continuous Drain Current	-
Technology	GaN SiC
Vgs - Gate-Source Breakdown Voltage	-
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	-
Transistor Type	HEMT
Output Power	200 W
Gain	19 dB
Maximum Operating Temperature	-

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Products specifications

Transistor Polarity	N-Channel
Maximum Drain Gate Voltage	-
Minimum Operating Temperature	- 40 C
Product Type	RF JFET Transistors
Pd - Power Dissipation	-
Id - Continuous Drain Current	-
Technology	GaN SiC
Vgs - Gate-Source Breakdown Voltage	-
Packaging	Tray
Vds - Drain-Source Breakdown Voltage	-
Transistor Type	HEMT
Output Power	200 W
Gain	19 dB
Maximum Operating Temperature	-