RF JFET Transistors 2.5-2.7GHz 360W 48V Gain 22dB GaN
Lead Time: 0 Days
Products specifications
|
Gain
|
22 dB |
|
Transistor Type
|
HEMT |
|
Maximum Drain Gate Voltage
|
55 V |
|
Transistor Polarity
|
N-Channel |
|
Id - Continuous Drain Current
|
360 mA |
|
Vds - Drain-Source Breakdown Voltage
|
48 V |
|
Maximum Operating Temperature
|
+ 85 C |
|
Packaging
|
Waffle |
|
Product Type
|
RF JFET Transistors |
|
Pd - Power Dissipation
|
83.5 W |
|
Minimum Operating Temperature
|
- 40 C |
|
Technology
|
GaN SiC |
|
Output Power
|
364 W |