QPD3601

Call for pricing

RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN

Availability: Out of stock

Qty:

Free shipping

RF JFET Transistors 3.4-3.6GHz 50V 180 Watt GaN

Products specifications

Vds - Drain-Source Breakdown Voltage	50 V
Transistor Type	HEMT
Gain	22 dB
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Output Power	180 W
Technology	GaN SiC
Pd - Power Dissipation	60.9 W
Minimum Operating Temperature	- 40 C
Maximum Drain Gate Voltage	55 V
Maximum Operating Temperature	+ 85 C
Packaging	Waffle
Id - Continuous Drain Current	360 mA

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	50 V
Transistor Type	HEMT
Gain	22 dB
Transistor Polarity	N-Channel
Product Type	RF JFET Transistors
Output Power	180 W
Technology	GaN SiC
Pd - Power Dissipation	60.9 W
Minimum Operating Temperature	- 40 C
Maximum Drain Gate Voltage	55 V
Maximum Operating Temperature	+ 85 C
Packaging	Waffle
Id - Continuous Drain Current	360 mA