RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
Products specifications
| Product Type | RF JFET Transistors |
| Packaging | Tray |
| Vds - Drain-Source Breakdown Voltage | 32 V |
| Vgs - Gate-Source Breakdown Voltage | 100 V |
| Pd - Power Dissipation | 45 W |
| Technology | GaN SiC |