RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
Products specifications
|
Product Type
|
RF JFET Transistors |
|
Packaging
|
Tray |
|
Vds - Drain-Source Breakdown Voltage
|
32 V |
|
Vgs - Gate-Source Breakdown Voltage
|
100 V |
|
Pd - Power Dissipation
|
45 W |
|
Technology
|
GaN SiC |