T1G4012036-FS

GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak

SKU: T1G4012036-FS

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Quantity

25+

Price

R 10,645.49

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GaN FETs DC-3.5GHz 36Volt GaN 120 Watt Peak

Products specifications

Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	36 V
Technology	GaN SiC
Maximum Drain Gate Voltage	- 2.9 V
Pd - Power Dissipation	117 W
Transistor Polarity	N-Channel
Packaging	Tray
Gain	18.4 dB
Id - Continuous Drain Current	12 A
Transistor Type	HEMT

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Products specifications

Product Type	RF JFET Transistors
Vds - Drain-Source Breakdown Voltage	36 V
Technology	GaN SiC
Maximum Drain Gate Voltage	- 2.9 V
Pd - Power Dissipation	117 W
Transistor Polarity	N-Channel
Packaging	Tray
Gain	18.4 dB
Id - Continuous Drain Current	12 A
Transistor Type	HEMT