T2G6000528-Q3

GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz
Lead Time: 140 Days

SKU: T2G6000528-Q3

Availability: 408 in stock

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GaN FETs DC-6GHz 28V P3dB 10W @3.3GHz
Lead Time: 140 Days

Products specifications

Packaging	Tray
Product Type	RF JFET Transistors
Technology	GaN SiC
Gain	15 dB
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Minimum Operating Temperature	-
Id - Continuous Drain Current	650 mA
Output Power	10 W
Vds - Drain-Source Breakdown Voltage	-
Vgs - Gate-Source Breakdown Voltage	-
Transistor Type	HEMT
Maximum Operating Temperature	-
Pd - Power Dissipation	12.5 W

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Products specifications

Packaging	Tray
Product Type	RF JFET Transistors
Technology	GaN SiC
Gain	15 dB
Maximum Drain Gate Voltage	-
Transistor Polarity	N-Channel
Minimum Operating Temperature	-
Id - Continuous Drain Current	650 mA
Output Power	10 W
Vds - Drain-Source Breakdown Voltage	-
Vgs - Gate-Source Breakdown Voltage	-
Transistor Type	HEMT
Maximum Operating Temperature	-
Pd - Power Dissipation	12.5 W