RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
Products specifications
| Product Type | RF JFET Transistors |
| Gain | 13 dB |
| Technology | GaAs |
| Packaging | Gel Pack |
| Pd - Power Dissipation | 1.4 W |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 65 C |
| Transistor Type | pHEMT |
| Id - Continuous Drain Current | 129 mA |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Vgs - Gate-Source Breakdown Voltage | - 15 V |