RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
Products specifications
| Id - Continuous Drain Current | 194 mA |
| Transistor Type | pHEMT |
| Product Type | RF JFET Transistors |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Vgs - Gate-Source Breakdown Voltage | - 3 V |
| Gain | 12 dB |
| Technology | GaAs |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.1 W |
| Minimum Operating Temperature | - 65 C |
| Packaging | Gel Pack |