TGF2080

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RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%

SKU: TGF2080

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RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%

Products specifications

Technology	GaAs
Gain	11.5 dB
Minimum Operating Temperature	- 65 C
Vds - Drain-Source Breakdown Voltage	12 V
Packaging	Gel Pack
Pd - Power Dissipation	4.2 W
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 7 V
Id - Continuous Drain Current	259 mA
Maximum Drain Gate Voltage	- 12 V
Maximum Operating Temperature	+ 150 C
Transistor Type	pHEMT

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Products specifications

Technology	GaAs
Gain	11.5 dB
Minimum Operating Temperature	- 65 C
Vds - Drain-Source Breakdown Voltage	12 V
Packaging	Gel Pack
Pd - Power Dissipation	4.2 W
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	- 7 V
Id - Continuous Drain Current	259 mA
Maximum Drain Gate Voltage	- 12 V
Maximum Operating Temperature	+ 150 C
Transistor Type	pHEMT