RF JFET Transistors DC-20GHz Gain 11dB 57% PAE@12GHz
Products specifications
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Maximum Operating Temperature | + 150 C |
| Technology | GaAs |
| Id - Continuous Drain Current | 194 mA |
| Packaging | Gel Pack |
| Product Type | RF JFET Transistors |
| Gain | 11 dB |
| Vgs - Gate-Source Breakdown Voltage | - 12 V |
| Transistor Type | pHEMT |
| Pd - Power Dissipation | 4.2 W |