GaN FETs DC-3.5GHz 100W 28V GaN
Products specifications
|
Vds - Drain-Source Breakdown Voltage
|
28 V |
|
Product Type
|
RF MOSFET Transistors |
|
Technology
|
GaN SiC |
|
Id - Continuous Drain Current
|
12 A |
|
Gain
|
14 dB |
|
Packaging
|
Tray |
|
Output Power
|
107 W |
|
Transistor Polarity
|
N-Channel |