GaN FETs DC-3.5GHz 100W 28V GaN
Products specifications
| Vds - Drain-Source Breakdown Voltage | 28 V |
| Product Type | RF MOSFET Transistors |
| Technology | GaN SiC |
| Id - Continuous Drain Current | 12 A |
| Gain | 14 dB |
| Packaging | Tray |
| Output Power | 107 W |
| Transistor Polarity | N-Channel |