TGF2929-HM

RF MOSFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN

SKU: TGF2929-HM

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Quantity

25+

Price

R 14,200.70

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RF MOSFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN

Products specifications

Id - Continuous Drain Current	7.2 A
Output Power	132 W
Transistor Type	HEMT
Technology	GaN SiC
Vds - Drain-Source Breakdown Voltage	50 V
Gain	17.4 dB
Vgs - Gate-Source Breakdown Voltage	- 2.8 V
Packaging	Waffle
Pd - Power Dissipation	140 W
Maximum Operating Temperature	+ 85 C
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C

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Products specifications

Id - Continuous Drain Current	7.2 A
Output Power	132 W
Transistor Type	HEMT
Technology	GaN SiC
Vds - Drain-Source Breakdown Voltage	50 V
Gain	17.4 dB
Vgs - Gate-Source Breakdown Voltage	- 2.8 V
Packaging	Waffle
Pd - Power Dissipation	140 W
Maximum Operating Temperature	+ 85 C
Product Type	RF JFET Transistors
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 40 C