RF JFET Transistors DC-25GHz 14Watt NF 1.5dB GaN
Lead Time: 0 Days
Products specifications
| Transistor Type | HEMT |
| Minimum Operating Temperature | - 40 C |
| Vgs - Gate-Source Breakdown Voltage | - |
| Gain | 14 dB |
| Output Power | 14 W |
| Product Type | RF JFET Transistors |
| Packaging | Gel Pack |
| Id - Continuous Drain Current | 1 A |
| Maximum Operating Temperature | + 85 C |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 15.8 W |
| Vds - Drain-Source Breakdown Voltage | - |
| Technology | GaN SiC |
| Maximum Drain Gate Voltage | - |