RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
Products specifications
| Output Power | 2.4 W |
| Transistor Type | HEMT |
| Id - Continuous Drain Current | 290 mA |
| Vds - Drain-Source Breakdown Voltage | - |
| Maximum Operating Temperature | + 85 C |
| Gain | 16 dB |
| Product Type | RF JFET Transistors |
| Technology | GaN SiC |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 5.1 W |
| Packaging | Gel Pack |
| Vgs - Gate-Source Breakdown Voltage | - |
| Maximum Drain Gate Voltage | - |