RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
Lead Time: 140 Days
Products specifications
|
Vds - Drain-Source Breakdown Voltage
|
- |
|
Transistor Type
|
HEMT |
|
Transistor Polarity
|
N-Channel |
|
Technology
|
GaN SiC |
|
Maximum Drain Gate Voltage
|
- |
|
Output Power
|
2.4 W |
|
Packaging
|
Gel Pack |
|
Vgs - Gate-Source Breakdown Voltage
|
- |
|
Minimum Operating Temperature
|
- 40 C |
|
Id - Continuous Drain Current
|
170 mA |
|
Product Type
|
RF JFET Transistors |
|
Pd - Power Dissipation
|
2.9 W |
|
Gain
|
18 dB |
|
Maximum Operating Temperature
|
+ 85 C |