TGF2942

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RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
Lead Time: 140 Days

SKU: TGF2942

Availability: 200 in stock

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RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
Lead Time: 140 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	-
Transistor Type	HEMT
Transistor Polarity	N-Channel
Technology	GaN SiC
Maximum Drain Gate Voltage	-
Output Power	2.4 W
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	170 mA
Product Type	RF JFET Transistors
Pd - Power Dissipation	2.9 W
Gain	18 dB
Maximum Operating Temperature	+ 85 C

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Products specifications

Vds - Drain-Source Breakdown Voltage	-
Transistor Type	HEMT
Transistor Polarity	N-Channel
Technology	GaN SiC
Maximum Drain Gate Voltage	-
Output Power	2.4 W
Packaging	Gel Pack
Vgs - Gate-Source Breakdown Voltage	-
Minimum Operating Temperature	- 40 C
Id - Continuous Drain Current	170 mA
Product Type	RF JFET Transistors
Pd - Power Dissipation	2.9 W
Gain	18 dB
Maximum Operating Temperature	+ 85 C