TGF2952

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RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm

SKU: TGF2952

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RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm

Products specifications

Maximum Drain Gate Voltage	100 V
Maximum Operating Temperature	+ 150 C
Technology	GaN SiC
Transistor Type	HEMT
Minimum Operating Temperature	- 65 C
Output Power	38.4 dBm
Transistor Polarity	N-Channel
Gain	20.4 dB
Vds - Drain-Source Breakdown Voltage	32 V
Packaging	Gel Pack
Pd - Power Dissipation	10.5 W
Product Type	RF JFET Transistors
Id - Continuous Drain Current	480 mA

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Products specifications

Maximum Drain Gate Voltage	100 V
Maximum Operating Temperature	+ 150 C
Technology	GaN SiC
Transistor Type	HEMT
Minimum Operating Temperature	- 65 C
Output Power	38.4 dBm
Transistor Polarity	N-Channel
Gain	20.4 dB
Vds - Drain-Source Breakdown Voltage	32 V
Packaging	Gel Pack
Pd - Power Dissipation	10.5 W
Product Type	RF JFET Transistors
Id - Continuous Drain Current	480 mA