TGF2955

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RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm

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RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm

Products specifications

Pd - Power Dissipation	41 W
Output Power	46.4 dBm
Maximum Drain Gate Voltage	100 V
Id - Continuous Drain Current	2.5 A
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 65 C
Product Type	RF JFET Transistors
Transistor Type	HEMT
Packaging	Gel Pack
Vds - Drain-Source Breakdown Voltage	32 V
Gain	19.2 dB
Technology	GaN SiC
Maximum Operating Temperature	+ 150 C

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Products specifications

Pd - Power Dissipation	41 W
Output Power	46.4 dBm
Maximum Drain Gate Voltage	100 V
Id - Continuous Drain Current	2.5 A
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 65 C
Product Type	RF JFET Transistors
Transistor Type	HEMT
Packaging	Gel Pack
Vds - Drain-Source Breakdown Voltage	32 V
Gain	19.2 dB
Technology	GaN SiC
Maximum Operating Temperature	+ 150 C