TGF2956

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RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm

SKU: TGF2956

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RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm

Products specifications

Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 65 C
Vds - Drain-Source Breakdown Voltage	32 V
Maximum Drain Gate Voltage	100 V
Transistor Type	HEMT
Id - Continuous Drain Current	3.5 A
Packaging	Gel Pack
Technology	GaN SiC
Product Type	RF JFET Transistors
Gain	19.3 dB
Transistor Polarity	N-Channel
Pd - Power Dissipation	53 W
Output Power	47.6 dBm

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Products specifications

Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 65 C
Vds - Drain-Source Breakdown Voltage	32 V
Maximum Drain Gate Voltage	100 V
Transistor Type	HEMT
Id - Continuous Drain Current	3.5 A
Packaging	Gel Pack
Technology	GaN SiC
Product Type	RF JFET Transistors
Gain	19.3 dB
Transistor Polarity	N-Channel
Pd - Power Dissipation	53 W
Output Power	47.6 dBm