TGF2957

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RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm

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RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm

Products specifications

Maximum Drain Gate Voltage	100 V
Vds - Drain-Source Breakdown Voltage	32 V
Technology	GaN SiC
Packaging	Gel Pack
Id - Continuous Drain Current	4.2 A
Product Type	RF JFET Transistors
Output Power	48.6 dBm
Pd - Power Dissipation	68 W
Gain	19.2 dB
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Transistor Type	HEMT
Minimum Operating Temperature	- 65 C

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Products specifications

Maximum Drain Gate Voltage	100 V
Vds - Drain-Source Breakdown Voltage	32 V
Technology	GaN SiC
Packaging	Gel Pack
Id - Continuous Drain Current	4.2 A
Product Type	RF JFET Transistors
Output Power	48.6 dBm
Pd - Power Dissipation	68 W
Gain	19.2 dB
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Transistor Type	HEMT
Minimum Operating Temperature	- 65 C