GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
Lead Time: 140 Days
Products specifications
|
Maximum Drain Gate Voltage
|
- |
|
Gain
|
18 dB |
|
Minimum Operating Temperature
|
- |
|
Output Power
|
6 W |
|
Product Type
|
RF JFET Transistors |
|
Id - Continuous Drain Current
|
600 mA |
|
Maximum Operating Temperature
|
- |
|
Pd - Power Dissipation
|
7.5 W |
|
Vds - Drain-Source Breakdown Voltage
|
32 V |
|
Vgs - Gate-Source Breakdown Voltage
|
- 2.7 V |
|
Transistor Polarity
|
P-Channel |
|
Transistor Type
|
HEMT |
|
Technology
|
GaN SiC |
|
Packaging
|
Tray |