TGF2965-SM

GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
Lead Time: 140 Days

SKU: TGF2965-SM

Availability: 100 in stock

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GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
Lead Time: 140 Days

Products specifications

Maximum Drain Gate Voltage	-
Gain	18 dB
Minimum Operating Temperature	-
Output Power	6 W
Product Type	RF JFET Transistors
Id - Continuous Drain Current	600 mA
Maximum Operating Temperature	-
Pd - Power Dissipation	7.5 W
Vds - Drain-Source Breakdown Voltage	32 V
Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Transistor Polarity	P-Channel
Transistor Type	HEMT
Technology	GaN SiC
Packaging	Tray

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Products specifications

Maximum Drain Gate Voltage	-
Gain	18 dB
Minimum Operating Temperature	-
Output Power	6 W
Product Type	RF JFET Transistors
Id - Continuous Drain Current	600 mA
Maximum Operating Temperature	-
Pd - Power Dissipation	7.5 W
Vds - Drain-Source Breakdown Voltage	32 V
Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Transistor Polarity	P-Channel
Transistor Type	HEMT
Technology	GaN SiC
Packaging	Tray