My Account

Shopping cart

Filters

Personal menu

Preferences

Search

772-TGF2978-SM

Manufacturer: Qorvo

TGF2978-SM

GaN FETs 8-12GHz 20W GaN PAE 50% Gain 11dB

SKU: TGF2978-SM

Qty:

Free shipping

Overview
Specifications
Contact Us

GaN FETs 8-12GHz 20W GaN PAE 50% Gain 11dB

Products specifications

Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Maximum Operating Temperature	+ 225 C
Output Power	19 W
Pd - Power Dissipation	33 W
Transistor Type	HEMT
Gain	11 dB
Vds - Drain-Source Breakdown Voltage	32 V
Product Type	RF JFET Transistors
Technology	GaN SiC
Id - Continuous Drain Current	1.3 A
Packaging	Tray
Transistor Polarity	N-Channel

Your name *

Your email *

Enquiry *

Products specifications

Vgs - Gate-Source Breakdown Voltage	- 2.7 V
Maximum Operating Temperature	+ 225 C
Output Power	19 W
Pd - Power Dissipation	33 W
Transistor Type	HEMT
Gain	11 dB
Vds - Drain-Source Breakdown Voltage	32 V
Product Type	RF JFET Transistors
Technology	GaN SiC
Id - Continuous Drain Current	1.3 A
Packaging	Tray
Transistor Polarity	N-Channel