SI7111EDN-T1-GE3

MOSFETs -30V Vds 12V Vgs PowerPAK 1212-8
Lead Time: 22 Days

SKU: SI7111EDN-T1-GE3

Availability: 11423 in stock

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MOSFETs -30V Vds 12V Vgs PowerPAK 1212-8
Lead Time: 22 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Pd - Power Dissipation	52 W
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	85 nC
Technology	Si
Rds On - Drain-Source Resistance	7.2 mOhms
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	60 A
Vgs - Gate-Source Voltage	12 V
Vgs th - Gate-Source Threshold Voltage	1.6 V
Channel Mode	Enhancement
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Pd - Power Dissipation	52 W
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	85 nC
Technology	Si
Rds On - Drain-Source Resistance	7.2 mOhms
Minimum Operating Temperature	- 55 C
Configuration	Single
Id - Continuous Drain Current	60 A
Vgs - Gate-Source Voltage	12 V
Vgs th - Gate-Source Threshold Voltage	1.6 V
Channel Mode	Enhancement
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel