SIHG22N60AEL-GE3

MOSFETs 600V Vds 30V Vgs TO-247AC

SKU: SIHG22N60AEL-GE3

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R 56.65

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MOSFETs 600V Vds 30V Vgs TO-247AC

Products specifications

Manufacturer	Vishay
Product Category	MOSFET
RoHS	Details
Package/Case	TO-247AC-3
Series	EL
Transistor Type	1 N-Channel
Brand	Vishay Semiconductors
Forward Transconductance - Min	16 S
Fall Time	28 ns
Product Type	MOSFET
Rise Time	24 ns
Factory Pack Quantity	1
Subcategory	MOSFETs
Typical Turn-Off Delay Time	86 ns
Typical Turn-On Delay Time	27 ns
Channel Mode	Enhancement
Pd - Power Dissipation	208 W
Technology	Si
Id - Continuous Drain Current	21 A
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Configuration	Single
Qg - Gate Charge	41 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	180 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole

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Products specifications

Manufacturer	Vishay
Product Category	MOSFET
RoHS	Details
Package/Case	TO-247AC-3
Series	EL
Transistor Type	1 N-Channel
Brand	Vishay Semiconductors
Forward Transconductance - Min	16 S
Fall Time	28 ns
Product Type	MOSFET
Rise Time	24 ns
Factory Pack Quantity	1
Subcategory	MOSFETs
Typical Turn-Off Delay Time	86 ns
Typical Turn-On Delay Time	27 ns
Channel Mode	Enhancement
Pd - Power Dissipation	208 W
Technology	Si
Id - Continuous Drain Current	21 A
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	10 V
Number of Channels	1 Channel
Configuration	Single
Qg - Gate Charge	41 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	180 mOhms
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole

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