SUP50010E-GE3

MOSFETs 60V Vds; 20V Vgs TO-220AB
Lead Time: 23 Days

SKU: SUP50010E-GE3

Availability: 628 in stock

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R 110.22

R 56.65

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R 43.57

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MOSFETs 60V Vds; 20V Vgs TO-220AB
Lead Time: 23 Days

Products specifications

Configuration	Single
Number of Channels	1 Channel
Qg - Gate Charge	212 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	2 mOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	150 A
Pd - Power Dissipation	375 W
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Technology	Si

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Products specifications

Configuration	Single
Number of Channels	1 Channel
Qg - Gate Charge	212 nC
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	2 mOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	150 A
Pd - Power Dissipation	375 W
Maximum Operating Temperature	+ 175 C
Packaging	Tube
Technology	Si